smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK2414 features low on-resistance r ds(on)1 =70m max. (@ v gs =10v,i d =5.0a) r ds(on)2 =95m max. (@ v gs =4v,i d =5.0a) low ciss c iss = 840 pf typ. built-in g-s gate protection diodes high avalanche capability ratings absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 10 a i dp * 4 0 a power dissipation p d 20 w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gate to source cutoff voltage v gs(off) v ds =10v,i d =1ma 1.0 1.6 2.0 v forward transfer admittance y fs v ds =10v,i d =5a 7.0 12 s v gs =10v,i d =5a 52 70 m v gs =4v,i d =5a 68 95 m input capacitance c iss 860 pf output capacitance c oss 440 pf reverse transfer capacitance c rss 110 pf turn-on delay time t on 15 ns rise time t r 90 ns turn-off delay time t off 75 ns fall time tf 35 ns v ds =10v,v gs =0,f=1mhz drain to source on-state resistance r ds(on) i d =5a,v gs(on) =10v,r g =10 ,v dd =30v 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type ic smd type transistors smd type smd type smd type smd type smd type ic smd type smd type smd type product specification
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